Impact of Fin Sidewall Taper Angle on Sub-14 nm FinFET Device Performance

Autor:	Abhisek Dixit, E. J. Nowak, Kota V. R. M. Murali, Terence B. Hook, Jeffrey B. Johnson
Rok vydání:	2014
Předmět:	Fin Materials science business.industry Doping Electronic engineering Optoelectronics Electrical performance business
Zdroj:	Physics of Semiconductor Devices ISBN: 9783319030012
DOI:	10.1007/978-3-319-03002-9_2
Popis:	Recent advances in FinFET technology include fins with tapered sidewalls in addition to conventional vertical sidewall fins. Our 3-D TCAD simulation results suggest that for low to moderately doped fins, vertical sidewall fins have superior electrical performance. Only at extremely high fin doping concentrations could tapered sidewall fins be electrically beneficial.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::20f3f7c46324041a07108db7a83ffbb3 https://doi.org/10.1007/978-3-319-03002-9_2 Zobrazit plný text záznamu