Wavelength extension beyond 1.5 µm in symmetric InAs quantum dots grown on InP(111)A using droplet epitaxy
| Autor: | Yu Nien Wu, Takaaki Mano, Shun-Jen Cheng, Kazuaki Sakoda, Yoshiki Sakuma, Takashi Kuroda, Ya Wen Ou, Neul Ha |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Band gap business.industry General Engineering General Physics and Astronomy 02 engineering and technology Substrate (electronics) Spectral shift Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Ternary alloy Controllability Wavelength Quantum dot 0103 physical sciences Optoelectronics 010306 general physics 0210 nano-technology business |
| Zdroj: | Applied Physics Express. 9:101201 |
| ISSN: | 1882-0786 1882-0778 |
| DOI: | 10.7567/apex.9.101201 |
| Popis: | By using a C 3v symmetric (111) surface as a growth substrate, we can achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled-photon emitters. Here, we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 µm by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of the barrier choice. |
| Databáze: | OpenAIRE |
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