Effect of Precursor on the Dielectric Properties of Diamond-Like Silicon–Carbon Films
| Autor: | M. A. Shapetina, M. L. Shupegin, T. D. Gurinovich, A. I. Popov, T. S. Chukanova, A. D. Barinov |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon General Chemical Engineering Dielectric permittivity Physics::Optics chemistry.chemical_element 02 engineering and technology Dielectric engineering.material 01 natural sciences Inorganic Chemistry Condensed Matter::Materials Science 0103 physical sciences Materials Chemistry Composite material 010302 applied physics Metals and Alloys Diamond 021001 nanoscience & nanotechnology Amorphous solid Carbon film chemistry engineering Polar Dielectric loss 0210 nano-technology |
| Zdroj: | Inorganic Materials. 56:799-808 |
| ISSN: | 1608-3172 0020-1685 |
| DOI: | 10.1134/s0020168520080026 |
| Popis: | We report results on frequency and temperature dependences of dielectric properties (dielectric permittivity and dielectric loss tangent) of amorphous silicon–carbon films produced using different precursors: poly(phenylmethylsiloxane) (PPMS) and poly(methylsiloxane) (PMS). It has been shown that the PPMS-based films consist of a well-defined polar dielectric, whereas the PMS-based films consist of a weakly polar dielectric. At the same time, their high-frequency dielectric permittivities differ relatively little (4.9 and 4.4, respectively, at 300 K and 1 MHz). We analyze the dielectric properties of the films as functions of frequency and temperature and in relation to the nature of the precursor. |
| Databáze: | OpenAIRE |
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