Thermochemical stability of silicon–oxygen–carbon alloy thin films: A model system for chemical and structural relaxation at SiC–SiO2 interfaces
| Autor: | D. M. Wolfe, Robert J. Nemanich, Dennis M. Maher, Gerald Lucovsky, Bruce J. Hinds, F. Wang, M. Xu, B. L. Ward |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Hydrogen Silicon Annealing (metallurgy) Alloy Analytical chemistry Infrared spectroscopy chemistry.chemical_element Surfaces and Interfaces engineering.material Condensed Matter Physics Surfaces Coatings and Films symbols.namesake chemistry symbols engineering Thin film Fourier transform infrared spectroscopy Raman spectroscopy |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2170-2177 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.581745 |
| Popis: | Alloy thin films of hydrogenated silicon–oxygen–carbon (Si,C)Ox x |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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