Improved Boron Activation with Reduced Preheating Temperature during Flash Annealing of Preamorphized Silicon
| Autor: | Alex See, Yunling Tan, Meisheng Zhou, Chyiu Hyia Poon, Dong Gui |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Amorphous silicon
Flash-lamp Materials science Silicon Renewable Energy Sustainability and the Environment Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Condensed Matter Physics Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Electrochemistry Wafer Boron Sheet resistance |
| Zdroj: | Journal of The Electrochemical Society. 155:H59 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.2806168 |
| Popis: | In flash lamp annealing, the entire wafer is uniformly preheated to an intermediate temperature before a millisecond duration flash of intense light is applied. This interaction of the preheating condition and final flash energy density on the properties of preamorphized boron-implanted silicon was studied. It was found that for a fixed flash energy density, an increase in sheet resistance was observed with higher preheating temperature. This sheet resistance degradation is attributed to the occurrence of solid-phase epitaxial regrowth (SPER) during preheating instead of during the high temperature flash step. When the preheating temperature is reduced, occurrence of SPER of the amorphous silicon during preheating is not possible due to the low temperature. As such, SPER has to take place during the high temperature flash anneal step. Since the solid solubilities attainable using SPER is higher than flash, by introducing SPER at a higher temperature, the amount of activated boron atoms that can be incorporated into the silicon lattice is increased and a sheet resistance improvement is observed. |
| Databáze: | OpenAIRE |
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