Optimization of active regions in midinfrared lasers
Autor: | J.T. Olesberg, Christoph H. Grein, Michael E. Flatté, S. A. Anson, B. Brown, T. C. Hasenberg, Thomas F. Boggess |
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Rok vydání: | 1999 |
Předmět: |
Condensed Matter::Quantum Gases
Materials science Physics and Astronomy (miscellaneous) business.industry Superlattice Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Semiconductor laser theory law.invention Condensed Matter::Materials Science law Net gain Optoelectronics Figure of merit business Current density Quantum well Order of magnitude |
Zdroj: | Applied Physics Letters. 74:188-190 |
ISSN: | 1077-3118 0003-6951 |
DOI: | 10.1063/1.123288 |
Popis: | The ideal performance of bulk, quantum well, and superlattice active regions for III–V interband midinfrared lasers are compared according to the maximum net gain per unit current density. Based on this figure of merit, which is appropriate for high-power as well as near-threshold operation, InAsSb quantum well active regions should have an order of magnitude lower threshold current than bulk InAs at room temperature. Optimized four-layer superlattices based on the InAs/GaInSb material system, however, should have two to ten times lower threshold currents than the quantum well active regions. Optimal thicknesses for these active regions were evaluated assuming a separate confinement region design. For the four-layer superlattices the optimal thickness is substantially thinner than has been commonly grown: 3 periods rather than 40 periods. |
Databáze: | OpenAIRE |
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