Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
| Autor: | Masahiro Watanabe, Shigehisa Arai, Xue–Ying Jia, Shigeo Tamura, Takashi Kojima, Yoshinori Hayafune |
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| Rok vydání: | 1998 |
| Předmět: | |
| Zdroj: | Japanese Journal of Applied Physics. 37:5961 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.37.5961 |
| Popis: | We investigated a size fluctuation of 50 nm periodic wire pattern of GaInAsP/InP structure with a typical wire width of around 30 nm, which was fabricated by an electron beam lithography followed by wet chemical etching. The size fluctuation of the ZEP-520 positive resist pattern was reduced from 2.7 nm to 1.4 nm by using a corrected dose profile taking the proximity effect into account, and that of the quantum-wire structure after wet etching was reduced from 3.8 nm to 2.9 nm. |
| Databáze: | OpenAIRE |
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