Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX
| Autor: | Qing-Tai Zhao, Qinghua Han, Paulus Aleksa, Siegfried Mantl, Juergen Schubert, Thomas Carl Ulrich Tromm |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Subthreshold conduction business.industry Oxide 02 engineering and technology Trapping 021001 nanoscience & nanotechnology Condensed Matter Physics Polarization (waves) 01 natural sciences Ferroelectricity Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry 0103 physical sciences Materials Chemistry Steep slope Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Drain current Negative impedance converter |
| Zdroj: | Solid-State Electronics. 159:71-76 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2019.03.037 |
| Popis: | Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. The negative capacitance is believed to be a transient phenomenon because a strong polarization switching is needed for the steep slope. We found that the sub-thermal SS degrades with the cycling measurements, which is assumed to be caused by the trap charging in the ferroelectric oxide layer. The tradeoff between polarization and charge trapping is responsible for the subthreshold behavior of the device. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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