Generation-recombination instabilities in thin-film structures

Autor:	V. V. Kolobaev
Rok vydání:	1999
Předmět:	Materials science Condensed matter physics Bistability Electromagnetism Magnet Analytical chemistry Thin film Condensed Matter Physics Atomic and Molecular Physics and Optics Recombination Differential (mathematics) Electronic Optical and Magnetic Materials
Zdroj:	Semiconductors. 33:410-411
ISSN:	1090-6479 1063-7826
Popis:	The possibility of negative differential resistance, which appears in symmetric thin-film metal-semiconductor-metal structures, is discussed. A model, which can explain to first approximation why generation-recombination processes that take place in the bulk of this sample during bipolar injection should lead to bistability, is proposed. It is shown that the design and use of these negative differential resistance structures could lead to promising new devices for detecting and processing information.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::20ac78051e8fadc77d629ea7f86bfd52 https://doi.org/10.1134/1.1187704 Zobrazit plný text záznamu Plný text ve formátu PDF