| Autor: |
V. Soukhoveev, Oleg Kovalenkov, Alexander Usikov, Vladimir Ivantsov, Y. V. Shapovalova, Vladimir A. Dmitriev, Yuri V. Melnik |
| Rok vydání: |
2004 |
| Předmět: |
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| Zdroj: |
International Semiconductor Device Research Symposium, 2003. |
| Popis: |
Heteroepitaxial growth of group III nitride layers on SiC substrates by hydride vapour phase epitaxy (HVPE) is described in this paper. AlN, GaN, and AlGaN epitaxial layers were grown on 2-inch SiC substrates with a growth rate ranging from 0.2 to 1.5 /spl ges/m/min. The reciprocal space maps for the thin and thick AlN layers grown on SiC substrates is presented. Dependence of etch pit density in AlN layers on layer thickness is illustrated. X-ray theta-omega scan for GaN/AlN/SiC heterostructure was showed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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