High power AlGaAs-GaAs visible diode lasers
| Autor: | Kathleen Meehan, M. S. O’Neill, P. Tihanyi, F.C. Jain, J. E. Williams, J.E. Dixon, L. S. Heath, Dana M. Beyea, M.J. Robinson |
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| Rok vydání: | 1994 |
| Předmět: |
Catastrophic optical damage
Materials science business.industry Slope efficiency Heterojunction Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Semiconductor laser theory Gallium arsenide Active layer chemistry.chemical_compound Optics chemistry law Optoelectronics Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Photonics Technology Letters. 6:775-777 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.311451 |
| Popis: | A high-power room-temperature AlGaAs graded index separately confined heterostructure (GRINSCH) laser emitting in the visible spectral regime (/spl sime/715 nm) is reported for the first time. The device is gain-guided and consists of 12 stripes, each 5 /spl mu/m in width with a centerline separation of 9 /spl mu/m. This high-power visible laser has been successfully fabricated using a GaAlAs active layer. The epitaxial layer was grown with significantly lower levels of oxygen compared to those grown using standard metalorganic sources. Threshold currents of 310 mA at 10/spl deg/C were routinely measured on uncoated devices. The uncoated device had a catastrophic optical damage limit of 540 mW and has a slope efficiency as high as 0.48. No degradation in device performance was observed during a 50-hour 150-mW burn-in. > |
| Databáze: | OpenAIRE |
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