DESIGN AND RESPONSE OF SEMICONDUCTOR DETECTORS TO HIGH INTENSITY TRANSIENT $gamma$ PULSES. Final Report
| Autor: | F Burns, K Starnes, R Alexander, null et al |
|---|---|
| Rok vydání: | 1962 |
| Předmět: |
Materials science
Silicon Physics::Instrumentation and Detectors business.industry Detector chemistry.chemical_element Semiconductor detector Semiconductor Optics chemistry Depletion region Electric field Optoelectronics High Energy Physics::Experiment Transient (oscillation) business Sensitivity (electronics) |
| Popis: | The response of 3 types of silicon junction detectors to high intensity transient gamma pulses was measured. The important differences among the detectors are depth of depletion region and electric field distribution within the device. The distinguishing features of the physical and electrical structure of the PIN, LID, and NPS detectors are described and compared. A brief description of the fabrication pro cedures is given. For maximum speed of response, the PIN detector was found to be most suitable, while for maximum sensitivity the lithium ion drift (LID) detector yielded best results. The sensitivity of the devices was found to be proportional to the depth of the depleted or space charge region of the detector. The results show that silicon devices specifically designed for gamma ray detection have distinct advantages over more conventional detectors. Design modifications are suggested to increase performance. (C.H.) |
| Databáze: | OpenAIRE |
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