Threshold Voltage Behavior and Short-Circuit Capability of p-Gate GaN HEMTs Depending on Drain- and Gate-Voltage Stress
| Autor: | Thorsten Oeder, Martin Pfost |
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| Rok vydání: | 2022 |
| Zdroj: | 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA). |
| DOI: | 10.1109/wipda56483.2022.9955266 |
| Databáze: | OpenAIRE |
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