Fabrication of high-performance voltage inverters based on carbon nanotube field-effect transistors

Autor:	Takaomi Kishimoto, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto, Yasuhide Ohno
Rok vydání:	2010
Předmět:	Materials science Passivation business.industry Transistor Nanotechnology Carbon nanotube Noise (electronics) Carbon nanotube field-effect transistor law.invention Noise margin law Optoelectronics Field-effect transistor business Voltage
Zdroj:	2010 IEEE Nanotechnology Materials and Devices Conference.
Popis:	We demonstrated high-performance complementary voltage inverters based on top-gated carbon nanotube field-effect transistors (CNTFETs) with SiN x passivation films. The carrier type of CNTFETs was controlled by forming condition of SiN x passivation films. Complementary voltage inverters comprising p- and n-type CNTFETs were fabricated on the same SiO 2 substrate. The static transfer and noise margin characteristics of the CNTFET based inverters were investigated. It was found that a gain of approximately 24 was achieved and that the device was robust against noise.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::207dd60091d97bfcdd8ba80a91e337a1 https://doi.org/10.1109/nmdc.2010.5652509 Zobrazit plný text záznamu