| Popis: |
In this paper we describe the development of a chrome dry etch process on a new type of mask etch tool. One crucial goal was to minimize the CD etch bias. To meet this goal, a procedure for the direct characterization of CD etch bias was developed. The common methods for measuring the CD etch bias as resist-to-chrome CD difference, such as confocal optical microscope or SEM measurement, only give correct results, if the sidewalls are identical to the calibration standard. This is normally not the case as, due to the differing step height of resist and chrome, and the fact that during process development, in particular, the sidewall shapes and angles can vary significantly. Thus, it is very important to use a CD measurement method which takes the sidewall shapes (slope, foot) into account. One novel method is the use of a Scanning Nano Profiler (SNP) which was derived from the AFM principle. In contrast to AFM the use of a special high aspect ratio tip with 90° sidewall angle, in combination with pixelwise scanning of the substrate surface, provides information about the true sidewall shape and CD. |
