Evaluation of 300 mm High Resistivity SOI UNIBOND material for RF applications up to millimeter wave using 65 nm CMOS SOI technology

Autor:	C. Raynaud, S. Boret, B. Ghyselen, Frederic Gianesello, Daniel Gloria, C. Mazure
Rok vydání:	2007
Předmět:	Materials science High resistivity CMOS business.industry Electrical resistivity and conductivity Extremely high frequency Homogeneity (physics) Electrical engineering Optoelectronics Silicon on insulator Wafer Radio frequency business
Zdroj:	2007 IEEE International Conference on Microelectronic Test Structures.
DOI:	10.1109/icmts.2007.374485
Popis:	In this paper, 300 mm high resistivity (HR) SOI UNIBONDtrade material is evaluated using RF component and millimeter wave (MMW) function realized in advanced 65 nm HR SOI CMOS technology. The goal is to investigate the insulating behavior, in term of resistivity homogeneity all over the wafer, of 300 mm wafer provided by SOITEC and to offer a benchmarking with well known 200 mm material. For this purpose a methodology based on high frequency measurement is proposed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2057eece9b85ed8a3d1144197687f853 https://doi.org/10.1109/icmts.2007.374485 Zobrazit plný text záznamu