Reduction of the dislocation density in molecular beam epitaxial CdTe(211)B on Ge(211)
| Autor: | F. Gemain, Ivan C. Robin, G. Badano, B. Amstatt, X. Baudry |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Photoluminescence
business.industry Annealing (metallurgy) chemistry.chemical_element Germanium Condensed Matter Physics Cadmium telluride photovoltaics Inorganic Chemistry Crystallography chemistry Etch pit density Ellipsometry Materials Chemistry Optoelectronics business Molecular beam Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 312:1721-1725 |
| ISSN: | 0022-0248 |
| Popis: | The high dislocation density (2×10 7 /cm 2 for a thickness of 7 μm) in CdTe(2 1 1)B on Ge(2 1 1) has become a roadblock for the technological exploitation of this material. We present a systematic study of in situ and post-growth annealing cycles aimed at reducing it. An etch pit density of 2×10 6 /cm 2 was achieved by optimizing the growth conditions and annealing the samples in situ . This finding was corroborated by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and ellipsometry measurements. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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