The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier
| Autor: | Vaidya Nathan, Binh-Minh Nguyen, Simeon Bogdanov, Paritosh Manurkar, Pierre Yves Delaunay, Edward Kwei Wei Huang, Darin Hoffman, Manijeh Razeghi |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Condensed Matter::Quantum Gases
Materials science Condensed Matter::Other business.industry Superlattice Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science chemistry.chemical_compound Gallium antimonide chemistry Antimonide Optoelectronics Mercury cadmium telluride Indium arsenide Electronic band structure Quantum well infrared photodetector business Dark current |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| Popis: | The Type-II InAs/GaSb superlattice photon detector is an attractive alternative to HgCdTe photodiodes and QWIPS. The use of p+ - π - M - N+ heterodiode allows for greater flexibility in enhancing the device performance. The utilization of the Empirical Tight Binding method gives the band structure of the InAs/GaSb superlattice and the new M- structure (InAs/GaSb/AlSb/GaSb) superlattice allowing for the band alignment between the binary superlattice and the M- superlattice to be determined and see how it affects the optical performance. Then by modifying the doping level of the M- superlattice an optimal level can be determined to achieve high detectivity, by simultaneously improving both photo-response and reducing dark current for devices with cutoffs greater than 14.5 μm. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|