MICROCRYSTALLINE SILICON FILMS PREPARED BY VERY HIGH FREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION AT LOW TEMPERATURE
| Autor: | Xinhua Geng, Qingsong Lei, Zhao Ying, Zhimeng Wu, Jianping Xi |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Phase transition
Materials science Silicon Analytical chemistry chemistry.chemical_element Statistical and Nonlinear Physics Condensed Matter Physics Silane Crystallinity symbols.namesake chemistry.chemical_compound Microcrystalline chemistry Plasma-enhanced chemical vapor deposition symbols Raman spectroscopy Power density |
| Zdroj: | International Journal of Modern Physics B. 19:3013-3020 |
| ISSN: | 1793-6578 0217-9792 |
| DOI: | 10.1142/s0217979205030840 |
| Popis: | Intrinsic microcrystalline silicon films have been prepared using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at low temperature. The effect of silane concentration and power density on the deposition rate and crystallinity of silicon films has been investigated. The Raman spectra indicates a phase transition from microcrystalline to amorphous phase at silane concentrations of higher than 6%. A growth rate of microcrystalline films as high as 6.6 A/s is achieved at a silane concentration of 6% and the crystalline volume fraction Xc is 39%. We have also observed that the decrease of power density shifts the phase transition to low silane concentration. |
| Databáze: | OpenAIRE |
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