Electrical properties of lightly doped p-type silicon–germanium single crystals

Autor:	P. Gaworzewski, K. Tittelbach-Helmrich, N. V. Abrosimov, U. Penner
Rok vydání:	1998
Předmět:	Electron mobility Materials science Effective mass (solid-state physics) chemistry Condensed matter physics Hall effect Doping General Physics and Astronomy chemistry.chemical_element Germanium Atmospheric temperature range Boron Acceptor
Zdroj:	Journal of Applied Physics. 83:5258-5263
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.367348
Popis:	Experimental results are presented on the electrical properties of lightly boron doped bulk Si1−xGex as a function of the Ge content x in the range 0
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::20356a2e94e1df1ada41abb58a41ea4e https://doi.org/10.1063/1.367348 Zobrazit plný text záznamu