An analysis of the temperature dependence of the gate current in complementary heterojunction field-effect transistors

Autor:	Steven M. Baier, Eric R. Fossum, Thomas J. Cunningham
Rok vydání:	1992
Předmět:	Materials science business.industry Gate dielectric Heterojunction Time-dependent gate oxide breakdown Thermionic emission Electronic Optical and Magnetic Materials Gate oxide Optoelectronics Field-effect transistor Electrical and Electronic Engineering Electric current business Quantum tunnelling
Zdroj:	IEEE Electron Device Letters. 13:645-647
ISSN:	1558-0563 0741-3106
DOI:	10.1109/55.192872
Popis:	The temperature dependence of the gate current versus the gate voltage in complementary heterojunction field-effect transistors (CHFETs) is examined. An analysis indicates that the gate conduction is due to a combination of thermionic emission, thermionic-field emission, and conduction through a temperature-activated resistance. The thermionic-field emission is consistent with tunneling through the AlGaAs insulator. The activation energy of the resistance is consistent with the ionization energy associated with the DX center in the AlGaAs. Methods to reduce the gate current are discussed. >
Databáze:	OpenAIRE
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