P-17: High Performance Polycrystalline Silicon TFTs by Heat-Retaining Enhanced Crystallization for SOP and AMOLED Applications

Autor:	Hsing Hua Wu, Po-Tsun Liu, Chi Lin Chen, Hung Tse Chen, Jia Xing Lin, Huang Sung Yu, Shun Fa Huang, Ting-Chang Chang, Yu G. Chen
Rok vydání:	2006
Předmět:	Materials science business.industry engineering.material Laser law.invention Active layer Polycrystalline silicon AMOLED Thin-film transistor law Electronic engineering engineering Optoelectronics Irradiation Crystallization business Layer (electronics)
Zdroj:	SID Symposium Digest of Technical Papers. 37:246
ISSN:	0097-966X
DOI:	10.1889/1.2433467
Popis:	For the purpose of a reliable driving back-plane in AMOLED application, the Heat Retaining Enhanced Crystallization (HREC) technology is developed. A heat-retaining capping layer is applied in order to effectually slow down the heat dissipation and to retain the duration of melt, hence an enlarged poly-si grain lateral growth is obtained. With single-shot laser irradiation, a 7um-well location-controlled-n ploy Si active layer is obtained, exhibiting a high mobility (uFE=260cm2/Vsec) for the proposed dual-gate TFT device.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::202cf3c931680f5727e9b6502526cf43 https://doi.org/10.1889/1.2433467 Zobrazit plný text záznamu Plný text