| Autor: |
Vladimir S. Balitsky, T. V. Setkova, L. V. Balitskaya, T. N. Dokina, D. Yu. Pushcharovsky, D. V. Balitsky |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Доклады Академии наук. 485:67-70 |
| ISSN: |
0869-5652 |
| Popis: |
The conditions and mechanisms of epitaxial growth of quartz-like a-GeO2 crystals on quartz substrates using an evaporative-recirculation method are considered. Relatively homogenous a-GeO2 crystals weighing up to 200 g are grown at a growth rate of up to 0.3 mm/day. It is established that molecular adhesion at the boundary between the quartz substrate and the overgrown layer of a-GeO2 cannot prevent its transition to a stable poorly soluble rutile-like phase. This makes it impossible to grow high-germanium quartz single crystals industrially using a mixture of quartz and quartz-like a-GeO2 as a nutrient. However, this process can be implemented if other more soluble germanium-containing compounds, such as quartz-like Si-containing germanium-oxide, are found. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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