Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes
| Autor: | Michael W. Moseley, G. Vizkelethy, D. Disney, D. P. Bour, William R. Wampler, A. A. Allerman, I. C. Kizilyalli, Jeramy R. Dickerson, R. M. Fleming, Jonathan J. Wierer, H. Nie, Andrew M. Armstrong, Robert Kaplar, Ozgur Aktas, François Léonard, A. Alec Talin, J. M. Campbell, M. P. King |
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| Rok vydání: | 2015 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon business.industry Wide-bandgap semiconductor chemistry.chemical_element Gallium nitride chemistry.chemical_compound Nuclear Energy and Engineering chemistry Optoelectronics Figure of merit Breakdown voltage Power semiconductor device Irradiation Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Transactions on Nuclear Science. 62:2912-2918 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2015.2480071 |
| Popis: | Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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