High-speed, high-reliability GaN power device with integrated gate driver
| Autor: | Ru-Yi Su, H. C. Tuan, Tom Tsai, Zhaofu Zhang, J. L. Yu, Gaofei Tang, Fu-Wei Yao, Chan-Hong Chern, Jiacheng Lei, Man-Ho Kwan, Thomas Yang, Lin You-Ru, Kevin J. Chen, Jiabei He, Alexander Kalnitsky |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Gallium nitride Slew rate Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Current source 01 natural sciences Threshold voltage chemistry.chemical_compound chemistry Logic gate 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Gate driver Optoelectronics Power semiconductor device business Voltage |
| Zdroj: | 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| Popis: | An enhancement-mode GaN power switch with monolithically integrated gate driver is demonstrated on a 650-V GaN-on-Si power device platform. The integrated GaN-based gate driver features advanced designs such as bootstrapped gate-charging current source that enables high current driving capability during the entire turn-on process and rail-to-rail output. The GaN power transistor with integrated gate driver was characterized up to 300 V/15 A switching operations using a double pulse tester, and exhibits suppressed gate ringing and fast switching speed. The peak drain voltage slew rate d V/dt is above 125 V/ns during turn-on, and 336 V/ns during turn-off. |
| Databáze: | OpenAIRE |
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