Two‐way oxide rupture scheme for PUF implementation in low‐cost IoT systems
| Autor: | Jongmin Lee, Yoonmyung Lee, Choon-Young Lee |
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| Rok vydání: | 2020 |
| Předmět: |
Scheme (programming language)
Computer science business.industry 020208 electrical & electronic engineering Transistor Oxide 02 engineering and technology law.invention chemistry.chemical_compound CMOS chemistry law Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Overhead (computing) Electrical and Electronic Engineering Internet of Things business Cmos process computer computer.programming_language |
| Zdroj: | Electronics Letters. 56:1047-1048 |
| ISSN: | 1350-911X 0013-5194 |
| DOI: | 10.1049/el.2020.0268 |
| Popis: | A two-way oxide rupture scheme in a transistor is proposed for area-efficient PUF implementation for low-cost IoT systems. Compared to a conventional one-way oxide rupture scheme, which requires a 4T unit cell structure, the proposed scheme allows a 2T unit cell structure, which enables up to 70% area reduction. A test chip is fabricated in 180 nm CMOS process to evaluate the effectiveness of the proposed scheme, confirming good randomness and uniqueness with small area overhead. |
| Databáze: | OpenAIRE |
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