ESD-improvement comparisons of HV n-/p-LDMOS components by the bulk modulations

Autor: Yi-Hao Chao, Kuei-Jyun Chen, Jen-Hao Lo, Chih-Ying Yen, Yi-Cih Wu, Shen-Li Chen, Jia-Ming Lin, Yu-Lin Lin, Yi-Hao Chiu, Chih-Hung Yang, Chun-Ting Kuo
Rok vydání: 2017
Předmět:
Zdroj: 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia).
DOI: 10.1109/ifeec.2017.7992390
Popis: HV n-/p-LDMOS devices with the source-side extending into bulk-region to evaluate the electrostatic-discharge (ESD) protection robustness by a TSMC 0.25 µm 60 V process are investigated in this paper. After a systematic analysis, the trigger voltage (V t1 ) values of the n-LDMOS with the source-side extending into the bulk-end either by uniformly or non-uniformly distributed manners that had decreased with the bulk space interval increasing (the source-side area ratio increased). However, the second breakdown current (I t2 ) values had increased obviously with this interval increasing. On the other hand, the trigger voltage (V t1 ) of the p-LDMOS with the source-side extending into bulk-region uniformly had a minimum value being 71.783 V. And, the holding voltage (V h ) values decreased a little about 3.2% with the bulk-side modulation. Meanwhile, the second breakdown current (I t2 ) values increased at least about 23%. Moreover, both the trigger voltage (V t1 ) and the holding voltage (V h ) of n-/p-LDMOS with uneven bulk modulation were smaller than the uniform modulation. And, the second breakdown current (I t2 ) improvement can be found that the n-LDMOS (2030%) are better than the p-LDMOS (43.1%). Therefore, the ESD-robustness improvement of n-LDMOS by the bulk uneven modulation is obvious in this work. Hence, the n-LDMOS with the bulk uneven modulation could increase the parasitic bulk-resistance (R bulk ) efficiently to achieve high anti-ESD ability.
Databáze: OpenAIRE
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