ESD-improvement comparisons of HV n-/p-LDMOS components by the bulk modulations
Autor: | Yi-Hao Chao, Kuei-Jyun Chen, Jen-Hao Lo, Chih-Ying Yen, Yi-Cih Wu, Shen-Li Chen, Jia-Ming Lin, Yu-Lin Lin, Yi-Hao Chiu, Chih-Hung Yang, Chun-Ting Kuo |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
LDMOS Engineering business.industry Electrical engineering 020206 networking & telecommunications 02 engineering and technology 01 natural sciences Logic gate 0103 physical sciences Modulation (music) 0202 electrical engineering electronic engineering information engineering Optoelectronics Area ratio business Voltage |
Zdroj: | 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia). |
DOI: | 10.1109/ifeec.2017.7992390 |
Popis: | HV n-/p-LDMOS devices with the source-side extending into bulk-region to evaluate the electrostatic-discharge (ESD) protection robustness by a TSMC 0.25 µm 60 V process are investigated in this paper. After a systematic analysis, the trigger voltage (V t1 ) values of the n-LDMOS with the source-side extending into the bulk-end either by uniformly or non-uniformly distributed manners that had decreased with the bulk space interval increasing (the source-side area ratio increased). However, the second breakdown current (I t2 ) values had increased obviously with this interval increasing. On the other hand, the trigger voltage (V t1 ) of the p-LDMOS with the source-side extending into bulk-region uniformly had a minimum value being 71.783 V. And, the holding voltage (V h ) values decreased a little about 3.2% with the bulk-side modulation. Meanwhile, the second breakdown current (I t2 ) values increased at least about 23%. Moreover, both the trigger voltage (V t1 ) and the holding voltage (V h ) of n-/p-LDMOS with uneven bulk modulation were smaller than the uniform modulation. And, the second breakdown current (I t2 ) improvement can be found that the n-LDMOS (2030%) are better than the p-LDMOS (43.1%). Therefore, the ESD-robustness improvement of n-LDMOS by the bulk uneven modulation is obvious in this work. Hence, the n-LDMOS with the bulk uneven modulation could increase the parasitic bulk-resistance (R bulk ) efficiently to achieve high anti-ESD ability. |
Databáze: | OpenAIRE |
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