High-power flared semiconductor laser amplifiers

Autor: B. Gopalan, Si Hyung Cho, R. Prakasam, C.E.C. Wood, S.A. Merritt, Pinghui S. Yeh, Vijayanand Vusirikala, S. Fox, C.C. Lu, S. Kareenahalli, Mario Dagenais, Peter J. S. Heim
Rok vydání: 1995
Předmět:
Zdroj: Optoelectronic Integrated Circuit Materials, Physics, and Devices.
ISSN: 0277-786X
DOI: 10.1117/12.206910
Popis: A normal incidence tapered laser amplifier is shown to produce more than 4.5 W optical power at 810 nm in a diffraction-limited beam. A new angled-facet tapered laser amplifier has demonstrated as much as 5 W optical power in a diffraction-limited beam at 810 nm with only a few mWs of coupled input power. Angled-facet laser amplifiers exhibit near-ideal Gaussian beam characteristics. More than 1.9 W CW is obtained in a 970 nm angled-facet tapered laser amplifier. A near-ideal beam quality factor M2 is obtained.
Databáze: OpenAIRE