Calculation of trap parameters from thermally stimulated photoconduction data
| Autor: | P. P. Beisyuk, V. P. Zayachkivskii, E. S. Nikonyuk, A. V. Savitskii |
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| Rok vydání: | 1976 |
| Předmět: |
Condensed Matter::Quantum Gases
Materials science Condensed Matter::Other business.industry General Physics and Astronomy Trapping Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Trap (computing) Condensed Matter::Materials Science Semiconductor Optoelectronics Atomic physics business Recombination |
| Zdroj: | Soviet Physics Journal. 19:921-924 |
| ISSN: | 1573-9228 0038-5697 |
| Popis: | The example of n-type CdTe∶Ge crystals is used to consider the scope for determining trap-ping-center parameters for photosensitive semiconductor crystals on the basis of the conditions for peaks in thermally stimulated photoconduction curves for two different states of initial trap filling. Equations are derived for the parameters of the trapping levels and the recombination levels. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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