| Autor: |
Shijie Wang, Handong Sun, L.M. Wong, T.I. Wong, Y.L. Foo, D. Sentosa, Bo Liu, Y.V. Lim |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
Journal of Crystal Growth. 319:8-12 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/j.jcrysgro.2011.01.029 |
| Popis: |
ZnO thin films were grown on c -sapphire and YSZ (1 1 1) substrates by pulsed laser deposition. The rocking curve of ZnO films grown on YSZ (1 1 1) had full width at half maximum (FWHM) of 0.03°, similar to that of single crystal ZnO. Neutral donor bound exciton (D 0 X) and its phonon replicas at equidistant of 72 (D 0 X-LO) and 144 meV and (D 0 X-2LO) and free exciton (FX) peaks were observed in low temperature photoluminescence (PL). The D 0 X and its phonon replicas peak intensity decreased while the FX and its phonon replicas (FX-LO and FX-LO 2 ) peak intensity increased when the temperature increased up to 120 K. The estimated activation energies of D 0 X and FX are 17.5 and 25 meV, respectively. Room temperature (RT) PL line width of FX was ∼77 meV only. Narrow FWHM of the rocking curve together with narrow RT PL line width of ZnO thin films grown on YSZ (1 1 1) is an indication of high crystalline and optical quality of the films. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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