Modeling HfO2/SiO2/Si interface
| Autor: | Jacob Gavartin, Alexander L. Shluger |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Condensed matter physics
Interface (Java) Band gap Chemistry Ab initio Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Dipole Ab initio quantum chemistry methods Electrical and Electronic Engineering Ab inito Electronic properties High-κ dielectric |
| Zdroj: | Microelectronic Engineering. 84:2412-2415 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2007.04.102 |
| Popis: | We present ab inito calculations of a realistic HfO"2/SiO"2/Si interface and discuss its structural and electronic properties. Calculations reveal a variety of possible non-epitaxial atomic arrangements at the interface, associated with a substantial atomic disorder in the SiO"2 and HfO"2 region. Calculated band alignment, although predictably smaller than experimental values, allows for instructive analysis of band gap variation, dipole formation and defects near the interface. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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