Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy
| Autor: | Fumiya Ishizaka, Akinobu Yoshida, Junichi Motohisa, Katsuhiro Tomioka |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Nanostructure business.industry Nanowire Nanotechnology 02 engineering and technology Thermal treatment 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Nanomaterials Inorganic Chemistry Lattice constant Transmission electron microscopy Phase (matter) 0103 physical sciences Materials Chemistry Optoelectronics 0210 nano-technology business |
| Zdroj: | Journal of Crystal Growth. 464:75-79 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2016.10.083 |
| Popis: | We report the growth of InGaAs nanowires (NWs) on Ge(111) substrates using selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) for novel InGaAs/Ge hybrid complementary metal-oxide-semiconductor (CMOS) applications. Ge(111) substrates with periodic arrays of mask opening were prepared, and InGaAs was selectively grown on the opening region of Ge(111). A uniform array of InGaAs NWs with a diameter around 100 nm was successfully grown using appropriate preparation of the initial surfaces with an AsH 3 thermal treatment and flow-rate modulation epitaxy (FME). We found that optimizing partial pressure of AsH 3 and the number of FME cycles improved the yield of vertical InGaAs NWs. Line-scan profile analysis of energy dispersive X-ray (EDX) spectrometry showed that the In composition in the InGaAs NW was almost constant from the bottom to the top. Transmission electron microscope (TEM) analysis revealed that the interface between InGaAs NW and Ge had misfit dislocations, but their distance was longer than that expected from the difference in their lattice constants. |
| Databáze: | OpenAIRE |
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