Growth and characterization of ZnSe epitaxial layers grown by the solution growth method

Autor:	Yasuo Okuno, Michihiro Sano, Yoji Yamashita
Rok vydání:	1993
Předmět:	Electron mobility Photoluminescence business.industry Chemistry Annealing (metallurgy) Doping Inorganic chemistry General Physics and Astronomy Epitaxy Hall effect Impurity Optoelectronics business Diode
Zdroj:	Journal of Applied Physics. 74:6133-6138
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.355178
Popis:	Experiments which led to the growth of a ZnSe layer suitable for a blue‐light‐emitting diode are presented. The ZnSe epitaxial layer was obtained by the solution growth method and, in the process, the electrical and optical properties of the ZnSe layers doped with various impurities were investigated. Through research it was concluded that the group‐VII elements (Cl,Br,I) were much more suitable than the group‐III elements (Al,Ga,In). It has also been proven that the Hall mobility and the intensity ratio of the deep to edge emission in the photoluminescence spectrum depended on the Se pressure applied during the annealing of the ZnSe source crystal. The deep emission in the photoluminescence spectrum was suppressed by using a ZnSe source material annealed prior to growth at a Se pressure of 8 atm. The maximum Hall mobility attained was 380 cm2/V s at a carrier density of 1.6×1017 cm−3.
Databáze:	OpenAIRE
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