Programming window degradation in flotox EEPROM cells
| Autor: | Carlo Riva, Paolo Ghezzi, C. Papadas, G. Pananakakis, Gerard Ghibaudo |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Functional programming
Computer science Window (computing) Condensed Matter Physics Capacitance Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Capacitor law Electronic engineering Equivalent circuit Electrical and Electronic Engineering EPROM Degradation (telecommunications) EEPROM |
| Zdroj: | Microelectronic Engineering. 15:621-624 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(91)90296-p |
| Popis: | A theoretical model explaining the programming window degradation as a function of the number of Write/Erase cycles in FLOTOX EEPROM cells is proposed. The collapsing of the programming window is quantitatively related to the oxide charge build-up in the FLOTOX tunnel region as the cycling number increases. The simplicity of the model permits a direct application at CAD level to be expected. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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