Wet-Chemical Processing of Tin-Doped Indium Oxide Layers

Autor:	Wim Talen, T.N.M. Bernards, Mark Van Bommel
Rok vydání:	1994
Předmět:	chemistry.chemical_compound Materials science chemistry Annealing (metallurgy) Alkoxide Doping Inorganic chemistry Oxide chemistry.chemical_element Tin Forming gas Indium Indium tin oxide
Zdroj:	MRS Proceedings. 346
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-346-469
Popis:	For industrial applications the wet-chemical deposition of tin-doped indium oxide (ITO) layers would be favourable, especially at low temperatures.It is shown that conductive transparent films can be made by spinning solutions which contain alkoxide precursors of indium and tin. The hydrolysis conditions of these alkoxides are varied using different water to indiumalkoxide ratios and different hydrolysis times. It is shown that when processed at low temperatures, the hydrolysis of these alkoxides has a severe influence on the electrical properties of the layers. A decrease in resistance as a function of time is observed for ITO layers which are stored at room temperature in an ambient atmosphere. Annealing at 350°C in forming gas further reduces the resistance of the ITO layers.
Databáze:	OpenAIRE
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