Deep submicron 3D surface metrology for 300 mm wafer characterization using UV coherence microscopy
| Autor: | Paul Montgomery, Denis Montaner |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
White light interferometry
Materials science business.industry Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Numerical aperture Metrology Optics Surface metrology Nondestructive testing Microscopy Wafer Electrical and Electronic Engineering business Coherence (physics) |
| Zdroj: | Microelectronic Engineering. 45:291-297 |
| ISSN: | 0167-9317 |
| Popis: | With the increase in diameter of Si wafers to 300 mm and above, and the decrease in minimum feature size to the deep submicron, there is a need to improve the lateral resolution of optical inspection techniques. Coherence microscopy normally uses a white light source in order to produce a narrow fringe envelope for use in surface relief measurement. In this paper we show that high intensity coherent UV light sources can also be used if a large numerical aperture objective is employed, in order to improve the lateral resolution. This forms the basis for a new metrology tool that could find many applications in the inspection of large Si wafers. |
| Databáze: | OpenAIRE |
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