The Nernst-Ettingshausen coefficient in n-type silicon

Autor:	D W Sear, W Dunstan
Rok vydání:	1974
Předmět:	Range (particle radiation) Materials science Silicon Field (physics) Scattering N type silicon Phosphorus General Engineering General Physics and Astronomy chemistry.chemical_element Thermodynamics Condensed Matter Physics symbols.namesake chemistry symbols Nernst equation Arsenic
Zdroj:	Journal of Physics C: Solid State Physics. 7:157-161
ISSN:	0022-3719
Popis:	Values of the Nernst-Ettingshausen coefficient are given for n-type silicon containing 3*1019-6*1025m-3 phosphorus or arsenic atoms, over the range 77-300 K, in a field of 1.00 T. The results are discussed briefly, the effect of mixed scattering being considered.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1fcfea10d9d2c914683f4c97a14830e7 https://doi.org/10.1088/0022-3719/7/1/022 Zobrazit plný text záznamu