Nonstoichiometric germanium nitride. A new insulating material for MIS microelectronics. II. Composition, properties, and the interface with a semiconductor
| Autor: | D. Jishiashvili, R. B. Dzhanelidze, G. D. Bagratishvili |
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| Rok vydání: | 1983 |
| Předmět: |
Materials science
business.industry Band gap chemistry.chemical_element Germanium Dielectric Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Hysteresis chemistry.chemical_compound Semiconductor chemistry Microelectronics Optoelectronics business Refractive index Germanium nitride |
| Zdroj: | Physica Status Solidi (a). 78:391-400 |
| ISSN: | 1521-396X 0031-8965 |
| DOI: | 10.1002/pssa.2210780204 |
| Popis: | The optical and electrical properties of nonstoichiometric germanium oxynitrides and their interfaces with a semiconductor are discussed depending on their composition. The band gap, dielectric constant, and refractive index of the films obtained are shown to depend linearly on the oxygen content. The nonstoichiometric germanium oxynitride–semiconductor (GaAs, Si, Ge) interface is characterized by a low surface state density, lack of hysteresis, and frequency dispersion of the C–U characteristics and a high stability to the bias-temperature treatment. [Russian text Ignored] |
| Databáze: | OpenAIRE |
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