Structure of the Fe2O3–Al2O3(0001) interface
Autor: | C. Barry Carter, Lisa A. Tietz |
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Rok vydání: | 1993 |
Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Condensed matter physics Metals and Alloys Stacking Heterojunction Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Transmission electron microscopy Sapphire Partial dislocations General Materials Science Dislocation Stacking fault |
Zdroj: | Philosophical Magazine A. 67:699-727 |
ISSN: | 1460-6992 0141-8610 |
DOI: | 10.1080/01418619308207185 |
Popis: | Misfit dislocation networks at the Fe2O3-Al2O3 (0001) interface have been characterized using weak-beam imaging in the transmission electron microscope. The heterojunctions were prepared by chemical vapour deposition of α-Fe2O3 (haematite) directly on to specially prepared electron-transparent sapphire substrates. The haematite grew epitaxially. Two types of hexagonal dislocation network consisting of firstly b=⅓〈1120〉 edge perfect dislocations and secondly b=⅓〈1010〉 edge partial dislocations were formed at the interface to accommodate the 5.5% lattice misfit. The first type of network has been associated with a normal near-Σ = 1 orientation of the haematite; the second, with twinned near-Σ = 3-oriented regions of the haematite film. Faceted double-positioning (lateral twin) boundaries and stacking faults are common defects in the haematite film. The stacking faults emanate from kinks in the substrate surface steps. Models of the interaction between the stacking faults and the misfit dislocation ... |
Databáze: | OpenAIRE |
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