| Autor: |
Hyun-Sang Seo, Yo-Seung Song, Jeong-Min Lee, Ki-Min Son, In-Gyu Lee, Shin-Nam Hong |
| Rok vydání: |
2006 |
| Předmět: |
|
| Zdroj: |
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 19:808-812 |
| ISSN: |
1226-7945 |
| Popis: |
In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
