Low resistivity hafnium nitride thin films as diffusion barriers for Cu interconnects

Autor:	Roy A. Araujo, X. Zhang, H. Wang
Rok vydání:	2007
Předmět:	Materials science chemistry Silicon Electrical resistivity and conductivity Diffusion Metallurgy chemistry.chemical_element Nitride Thin film Composite material Tin Copper Hafnium
Zdroj:	2007 International Semiconductor Device Research Symposium.
DOI:	10.1109/isdrs.2007.4422366
Popis:	In this paper, HfN on Si(100) has similar growth quality and electrical resistivity as HfN on MgO(100) (~30 muOmega-cm ), The resistivity values for HfN films on both substrates are much lower than that of TaN and TiN. Preliminary Cu diffusion test along with its low resistivity suggest that cubic HfN can be a promising candidate for Cu diffusion barriers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1fad5b8040edb53ec0a05d9e59b295d4 https://doi.org/10.1109/isdrs.2007.4422366 Zobrazit plný text záznamu