Use of Si KLL Auger shifts and the Auger parameter in XPS to distinguish Ti silicides from a Ti/Si mixture in thin films
| Autor: | Kuratomi Takashi, David Thompson, Paul Mack, I-Cheng Chen, Christopher R. Brundle, Ghazal Saheli, Christopher Lazik, Jeffrey W. Anthis |
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| Rok vydání: | 2019 |
| Předmět: |
Radiation
Materials science 010304 chemical physics Chemical shift Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Auger chemistry.chemical_compound Stack (abstract data type) chemistry X-ray photoelectron spectroscopy 0103 physical sciences Silicide Wafer Physical and Theoretical Chemistry Thin film 0210 nano-technology Spectroscopy Deposition (law) |
| Zdroj: | Journal of Electron Spectroscopy and Related Phenomena. 234:57-63 |
| ISSN: | 0368-2048 |
| DOI: | 10.1016/j.elspec.2019.04.004 |
| Popis: | A particular wafer processing step involves deposition of a Ti thin film (˜6 nm to ˜13 nm) on Si, under processing conditions intended to form a silicide with specific electrical properties. It is difficult, however, to distinguish silicide formation from mere elemental inter-diffusion. Routine laboratory XPS, using an Al X-Ray source(1486.6ev), does have an appropriate probing depth for the film stack involved, but the chemical shifts in Ti (2p) and Si(2p) are too small ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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