An Ultra-Wideband Balun Using Multi-Metal GaAs MMIC Technology
| Autor: | Xing Lan, D Yamauchi, David Farkas, Flavia S. Fong, Wen-Ben Luo, K. Kono, Mark Kintis |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Bandwidth (signal processing) Electrical engineering Impedance matching Ultra-wideband Integrated circuit High-electron-mobility transistor Condensed Matter Physics law.invention chemistry.chemical_compound chemistry law Balun Benzocyclobutene Electrical and Electronic Engineering business Monolithic microwave integrated circuit |
| Zdroj: | IEEE Microwave and Wireless Components Letters. 20:474-476 |
| ISSN: | 1558-1764 1531-1309 |
| DOI: | 10.1109/lmwc.2010.2050302 |
| Popis: | In this paper, we demonstrate an ultra-wideband MMIC Marchand balun that utilizes a two-layer benzocyclobutene (BCB) GaAs MMIC process with a total of 4 metal layers. This multi-metal technology is built upon a standard GaAs HEMT technology with full compatibility. The fabricated balun achieved an approximately 11:1 bandwidth from 2 to 22 GHz, with less than 3-degree maximum phase imbalance, and less than 1 dB maximum amplitude imbalance. To our knowledge, this is the largest bandwidth ratio ever reported for an MMIC Marchand balun. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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