Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

Autor:	S. S. Lau, K. S. Boutros, Q. J. Xing, J. M. Redwing, D. Qiao, L. S. Yu
Rok vydání:	1998
Předmět:	Nickel Materials science Physics and Astronomy (miscellaneous) chemistry Condensed matter physics Photoconductivity Schottky diode chemistry.chemical_element Electronic density of states Titanium
Zdroj:	Applied Physics Letters. 73:238-240
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.121767
Popis:	The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3–0.4 eV larger than those for Ni and Ti on n-GaN, which are in good agreement with Schottky model predictions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1f74706efbaa98f50e8a3e4084f4c140 https://doi.org/10.1063/1.121767 Zobrazit plný text záznamu