Effect of the number of pairs of the layers on the quality of the superlattices of the In x Ga1 − x As/GaAs/.../GaAs(001) type grown by molecular beam epitaxy under computer control
| Autor: | G. F. Kuznetsov |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
X-ray absorption spectroscopy
Materials science Superlattice Alloy Analytical chemistry engineering.material Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Crystallography Quality (physics) Computer control engineering Dislocation Molecular beam epitaxy |
| Zdroj: | Semiconductors. 43:472-479 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782609040125 |
| Popis: | By the specified program of computer control over the growth process, superlattices of the InxGa1 − xAs/GaAs/.../GaAs(001) type with the number of alternating pairs N1 = 12, N2 = 6, and N3 = 3 were grown. Using the X-ray methods of quantitative analysis, the values of periods T1 = 22 nm, T2 = 22.5 nm, and T3 = 22.3 nm and the In content x1 = 0.09, x2 = 0.091, and x3 = 0.092 in these superlattices are measured. In the superlattice with N1 = 12, the plastic deformation is detected. In superlattices with N2 = 6 and N3 = 3, no plastic deformation during the growth was observed. The obtained magnitudes of the periods turned out smaller by a factor of approximately 2 and the alloy concentration turned out smaller by 1/3 than it was specified by the computer program. The measured and calculated values of elastic stresses turned out equal to σ2N = 2.43 × 106 Pa and σ2N − 1 = −0.88 × 109 Pa, at which the plastic deformation took place in the layers of the superlattice with N1 = 12. In superlattices with N2 = 6 and N3 = 3, the elastic stresses were σ2N = 1.96 × 10 6 Pa, σ2N − 1 = −1.45 × 109 Pa and σ2N = 0.99 × 106 Pa, σ2N − 1 = −1.88 × 109 Pa, respectively. These stresses turned out insufficient to initiate the process of dislocation generation. |
| Databáze: | OpenAIRE |
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