Parameter determination of the polysilicon emitter interface for bipolar transistor
| Autor: | G. P. Kolomoets, M. M. Tkachenko, V. N. Nazarenko |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Engineering
Equivalent series resistance business.industry Heterostructure-emitter bipolar transistor Optical engineering Interface (computing) Bipolar junction transistor Electrical engineering Noise (electronics) Physics::Accelerator Physics Optoelectronics Anomaly (physics) business Common emitter |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.131023 |
| Popis: | The electrical parameters of polysilicon-contacted emitters are investigated. The emitter-base junction C-2-V plots demonstrated an anomaly because of charge occurrence at the polySi-monoSi interface. A critical analysis of well-known methods for emitter series resistance determination is carried out and the new method, which coupled the dc and ac measurement's dignities, is described. The procedure of emitter low-frequency noise determination is proposed and the experimental results received by this manner are presented.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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