Improving the Activation of the P$^+$ Region of Low-Temperature Polycrystalline Si TFTs by Using Solid-Phase Crystallization
| Autor: | N. Sasaki, Kunihiro Suzuki, Y. Ebiko |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Fabrication
Materials science Silicon business.industry chemistry.chemical_element Germanium Electronic Optical and Magnetic Materials law.invention Ion implantation chemistry CMOS Thin-film transistor law Electronic engineering Optoelectronics Electrical and Electronic Engineering Crystallization business Sheet resistance |
| Zdroj: | IEEE Transactions on Electron Devices. 52:429-432 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2005.843870 |
| Popis: | We have developed a low-temperature fabrication process for making thin-film transistors (TFTs) with highly activated source and drain regions by utilizing pre-amorphization by Ge-ion implantation followed by solid-phase crystallization. The sheet resistances of the p/sup +/ polysilicon layers formed by B-ion implantation with and without Ge-ion implantation were, respectively, 200 and 1500 /spl Omega//sq. We confirmed reducing the sheet resistance of p/sup +/ polysilicon increases the on-current of TFTs on glass substrates. This process is promising for making high-performance CMOS peripheral circuits for liquid crystal display panels. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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