Comparison of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) samples by using hard X‐ray photoelectron spectroscopy (HX‐PES)

Autor: Keisuke Kobayashi, K. Okashita, C.G. Jin, B. Mizuno, Y. Sasaki, K. Nakamoto, Eiji Ikenaga, M. Kobata
Rok vydání: 2008
Předmět:
Zdroj: physica status solidi c. 5:932-934
ISSN: 1610-1642
1862-6351
DOI: 10.1002/pssc.200778337
Popis: We measured HX-PES (Si 1s) of ultra low energy ion implantion (I/I) samples combined with Ge pre-amorphizaiton ion implantation (Ge-PAI) before and after spike RTA, and compared it with that of plasma doping (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. Ge-PAI+I/I sample showed strong asymmetric in lower binding energy region due to Si-Ge bonding. After spike RTA, PD sample showed superior impurity activation than that of Ge-PAI+I/I sample. Both Ge-PAI+I/I and PD sample showed excellent recrystallization after spike RTA. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE
Externí odkaz: