Novel N/PFET Vt control by TiN plasma nitridation for aggressive gate scaling
| Autor: | X. Zhang, Manfred Eller, Mitsuhiro Togo, Murali Kota, T. Shimizu, Suraj K. Patil, Dina H. Triyoso, Suresh Uppal, Srikanth Samavedam, E. C. Silva, S. Dag, J. Lian, W. H. Tong, Y. Mamy Randriamihja |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Gate resistance Electrical engineering chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Threshold voltage Plasma nitridation Reliability (semiconductor) chemistry law 0103 physical sciences Optoelectronics Work function Photolithography 0210 nano-technology business Tin Scaling |
| Zdroj: | 2016 IEEE Symposium on VLSI Technology. |
| DOI: | 10.1109/vlsit.2016.7573436 |
| Popis: | A novel N/PFET threshold voltage (Vt) control scheme was developed for aggressive gate scaling. TiN plasma nitridation reduces absolute Vt by 100mV for both NFETs and PFETs at the same time without photolithography step increase and performance or reliability penalty. TiN plasma nitridation does not need additional work function metal (WFM) to control Vt and hence allows thicker gate contact metal for low gate resistance and improved AC performance. |
| Databáze: | OpenAIRE |
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