Photoluminescence and structural analysis of terbium doped porous silicon

Autor:	M. Ferid, Meherzi Oueslati, Bruno Canut, Kais Daoudi, J.A. Roger, H. Elhouichet, A. Moadhen, C.S Sandu
Rok vydání:	2003
Předmět:	Nanocomposite Photoluminescence Silicon Chemistry Transmission electron microscopy Doping Analytical chemistry chemistry.chemical_element Terbium Thermal treatment Condensed Matter Physics Porous silicon Electronic Optical and Magnetic Materials
Zdroj:	physica status solidi (a). 197:360-364
ISSN:	1521-396X 0031-8965
DOI:	10.1002/pssa.200306525
Popis:	Porous silicon (PS) doped with terbium (Tb 3+ ) has been prepared by impregnation of PS layers with chloride solution of terbium. The dependency of photoluminescence (PL) intensity on the Tb 3+ concentration has been studied. Rutherford Back-scattering Spectrometry (RBS) spectra indicate clearly a total and uniform penetration of rare earth into the PS layers at all different percentages. PL spectra show an increase of the intensity of both Tb 3+ peaks and PS band when the concentration of TbCl 3 solution increases. The PL mechanism is discussed through time-resolved photoluminescence measurements, and in relation with thermal treatment effects. Transmission Electron Microscopy (TEM) technique has also been used to analyse the structure of this nanocomposite material.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1f0932b6f9b452178f1fb58b06885e1a https://doi.org/10.1002/pssa.200306525 Zobrazit plný text záznamu Plný text